| PART |
Description |
Maker |
| MA4EX950H-1225 MA4EX950H-1225T |
HMICTM硅双平衡混频器，700 - 1200兆赫
Silicon Double Balanced HMICTM Mixer, 700 - 1200 MHz
|
MACOM[Tyco Electronics]
|
| ZB4CS-700-10W |
Power wer Splitter/Combiner 4 Way-0° 400 to 700 MHz
Power wer Splitter/Combiner 4 Way-0∑ 400 to 700 MHz
Power wer Splitter/Combiner 4 Way-0 400 to 700 MHz
Power wer Splitter/Combiner 4 Way-0400 to 700 MHz 400 MHz - 700 MHz RF/MICROWAVE COMBINER, 0.8 dB INSERTION LOSS
|
MINI[Mini-Circuits]
|
| BCR151T BCR151 BCR151F BCR151L3 BCR151L3E6327 BCR1 |
CAP METAL POLYPRO .020UF 630V 3%
PNP Silicon Digital Transistor
Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package
Digital Transistors - R1=100 kOhm R2=100 kOhm
Digital Transistors - R1= 100 kOhm ; R2= 100 kOhm
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BCR162 BCR162F BCR162L3 BCR162T BCR162FE6327 BCR16 |
Digital Transistors - R1=4,7 kOhm R2=4,7 kOhm
Digital Transistors - R1= 4,7 kOhm ; R2= 4,7 kOhm
PNP Silicon Digital Transistor 进步党硅数字晶体
|
Infineon Technologies AG
|
| BCR196L3 BCR196W BCR196 BCR196F BCR196T BCR196TE63 |
Digital Transistors - R1= 47 kOhm ; R2= 22 kOhm
Digital Transistors - R1=47 kOhm R2=22 kOhm
PNP Silicon Digital Transistor
|
INFINEON[Infineon Technologies AG]
|
| PDTB113ZT215 PDTB113ZT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| PEMB2 PEMB2_1 |
PNP resistor-equipped double transistor R1 = 47 kohm, R2 = 47 kohm
From old datasheet system
|
NXP Semiconductors
Philips Semiconductors
|
| PDTA143XS |
PDTA143X series; PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 10 kOhm
|
Philips
|
| PDTA123J PDTA123JK PDTA123JM PDTA123JU PDTA123JS |
PDTA123J series; PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm
|
Philips
|
| PDTC123J PDTC123JK PDTC123JM PDTC123JS PDTC123JU P |
PDTC123J series; NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PDTB123ET |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm PNP配电阻型晶体管：耐压0V，电00mA；R1 = 2.2 千欧 R2 =2.2千欧
|
NXP Semiconductors N.V.
|
| PDTC114EU PDTC114E PDTC114EE PDTC114EEF PDTC114EK |
NPN resistor-equipped transistor; R1 = 10 kohm, R2 = 10 kohm
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
